Surface phenomena of ZrO₂ coated Si (100) at different substrate temperatures

Abstract

실리콘 표면에 코팅된 ZrO₂ 의 기판온도에 따른 표면현상에 관해 XPS, XRD, AFM, SE를 통해 연구하였다. RF sputtering의 방법으로 실리콘에 ZrO₂를 코팅하였고 Ar과 O2의 비율을 1:1로 하여 기판의 온도를 상온, 100℃, 200℃, 300℃, 350℃로 조절하여 실험하였다. XPS를 통하여 실리콘 표면에 ZrO₂가 코팅된 정도를 확인할 수 있었고, 기판의 온도에 따른 필름 표면의 산화상태를 알 수 있었다. 기판의 온도가 증가할수록 표면에 있는 ZrO₂의 산화상태가 ZrOx(0

We report the effect of annealing of the zirconium oxide deposited surfaces. The zirconium oxide thin film was deposited on the Si (100) surfaces applying RF magnetron sputtering process. We performed with Ar/O2 (1:1) mixture at different substrate temperatures i.e. room temperature, 373, 473, 573, and 623K, respectively. The zirconium oxide films on Si (100) surfaces were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. The surface chemical composition and properties: a chemical shift of the Zr 3d and O 1s core levels of the zirconium oxide thin films was studied with XPS. The crystal structure of the zirconium oxide thin films was determined by XRD. The surface morphology of zirconium oxide film was investigated using AFM. The thicknesses of zirconium oxide film were indicated SE.