바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 레이저 트리거링 및 멤리스터 특성에 대한 연구

Abstract

In this thesis, we demonstrated bidirectional laser triggering and memristive states were realized in a two-terminal electronic device based on a vanadium dioxide (VO2) thin film. By incorporating a 966 nm pump laser diode, the bidirectional laser triggering of up to 10 mA was achieved, and the transient responses of device currents were analyzed. A switching contrast between off-state and on-state currents was measured as ~3571, and the rising and falling times were measured as ~40 and ~20 ms. By utilizing a CO2 laser for excitation, the bidirectional current switching of up to 20 mA was achieved, and a maximum switching contrast was measured as ~7067. The rising and falling times were measured as ~30 and ~16 ms. The memristive states in a VO2 device was also realized by using a 966 nm laser diode for optical stimulus. When the device was thermally biased at ~71.6 ℃, seven multi-resistance states were obtained by six subsequent laser pulses with 10 ms duration and increasing power, and the maximum resistance fluctuation was ~2.2% of the settled resistance. In a stabilization time of 5 s after the laser excitation, the maximum resistance fluctuation was reduced down to ~0.9%.