PUKYONG

DPP 기반의 고분자 반도체를 갖는 ambipolar OFET에 관한 연구

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Alternative Title
Study on ambipolar OFET with DPP based polymer semiconductor
Abstract
Organic Field-Effect Transistors (OFETs) are expected to be used as a critical component of flexible electronics due to their low-cost solution-processibility and mechanical flexibility of organic semiconductors. In particular, there have been lots of interests on the OFETs fabricated with ambipolar semiconductors, that have both p-type and n-type properties in single active layer because of their advantages that potentially allow easy fabrication of light-emitting transistors or inverting logic circuits. A promising class of organic materials for such ambipolar characteristics is based on diketopyrrolopyrrole (DPP)-containing copolymers, that consist of DPP-acceptor and a large variety of donor blocks and exhibit a high mobility up to >10 cm2/Vs, as has been reported by several groups. In the thesis, we have fabricated OFETs using diketopyrrolopyrrole (DPP)-containing polymer semiconductors, which are known to have ambipolar properties, as active layers. The DPP polymer semiconductors used in this study were based on 3,6-di-2-thienyl-1,4-diketopyrrolo[3,4-c]pyrrole (T-DPP-T) alternating with intermediate 1,4-phenylene units (PDPPTPT), 2,5-thienylene units (PDPP3T), and thieno[3,2-b]thiophenes units (PDPP2T-TT). First, we examined the effects of the vacuum annealing on the ambipolar characteristics of the DPP based polymer semiconductor FETs with BG/TC structure. Next, we have analyzed on morphology and crystallinity of DPP based polymer semiconductor films and then fabricated ambipolar OFET with TG/BC structure. After the electrical characteristics measurements on the DPP based ambipolar OFETs, the activation energy and the density of state (DOS) were obtained by low-temperature experiment. Finally, we have investigated the effects of donor block in DPP based polymers on the charge transfer characteristics by applying the low-temperature experimental results to the Gaussian Disorder Model (GDM).
Author(s)
윤규복
Issued Date
2017
Awarded Date
2017. 2
Type
Dissertation
Keyword
ambipolar semiconductor ambipolar transistor organic field-effect transistor
Publisher
부경대학교 대학원
URI
https://repository.pknu.ac.kr:8443/handle/2021.oak/13503
http://pknu.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002331742
Affiliation
부경대학교 대학원
Department
대학원 인쇄공학과
Advisor
이지열
Table Of Contents
Ⅰ. 서 론 1
Ⅱ. 이 론 3
1. 전계 효과 트랜지스터 3
2. 유기 반도체 5
3. Ambipolar OFET 7
Ⅲ. 실험 및 측정 8
1. 실험 재료 8
가. DPP 기반의 고분자 반도체 8
나. ODTS와 PMMA 10
2. 실험 방법 11
가. Self-Assembled Monolayer (SAM) 11
나. Spin-coating 12
다. Thermal evaporation 13
3. 측정 방법 15
가. Vacuum probe station 15
나. Atomic Force Microscope (AFM) 16
다. X-Ray Diffraction (XRD) 17
Ⅳ. DPP 기반의 고분자 반도체를 갖는 ambipolar OFET의 어닐링 효과 19
1. 실험 과정 19
2. 결과 및 고찰 21
가. 전기적 특성 21
나. 어닐링 이후의 전기적 특성 25
3. 결론 27
Ⅴ. 서로 다른 도너 블록을 가진 DPP 기반의 고분자 반도체의 특성 비교 28
1. 실험 과정 28
2. 결과 및 고찰 30
가. 게이트 절연체 형성을 위한 PMMA의 두께 최적화 30
나. DPP 기반의 고분자 반도체 박막의 모폴로지 31
다. DPP 기반의 고분자 반도체 박막의 결정화도 32
라. 전기적 특성 34
마. 저온 실험 38
바. Density of State (DOS) 40
사. Gaussian Disorder Model (GDM) 42
3. 결론 44
Ⅵ. 요 약 46
참고문헌 48
Degree
Master
Appears in Collections:
대학원 > 인쇄공학과
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