초임계 이산화탄소를 이용한 웨이퍼 표면의 유/무기 파티클 제거

Abstract

In this study,A Cleaning method for effectively removing organic/inorganic particles on the silicon wafer was developed by adding cleaning liquid to supercritical carbon dioxide (scCO2). Cleaning solutions comprise of various type of binder, HF concentration, and surfactants were prepared and applied on a silicon wafer. The cleaned wafer surfaces were observed using an optical microscope and SEM images. In the case of phosphate binder, more than 70% of particles were removed from the silicon surface. While the alcohol binder gave the cleaning efficiency only higher than 50%. However, the residue was formed on the silicon surface when sulfite binder was employed. In order to examine the role of surfactant, three of TMN-6, NP-9, and Tergitol 15-S-7) were used in the experiments. The result showed that the surfactant built up the residue on the silicon surface. Finally, the cleaning performance was improved by increase the reaction time and HF concentration of cleaning solution.