Viologen 기반 N형 Dopant를 이용한 고이동도 OFET소자 제작에 관한 연구

Abstract

Recently, a lot of studies have been conducted to improve the performance of an Organic Field Effect Transistor (OFET) device.[1] For example, One of them is about controlling a molecular structure through organic synthesis. Another one is that by using an additive, it induces a charge carrier; 'a doping effect' and improves the crystallinity of the thin film by controlling the molecular arrangement of it. In this study, we conducted a study to develop a high performance OFET device by using an additive that inducing N-type doping. In particular, we investigated the effect of viologen with strong N - type doping on the performance improvement of N - type organic semiconductor transistors by various actions such as the generation of free electrons and the plasticizer effect.