Thin-Film Electroluminescent Device of Y 2 SiO 5 :Eu 3+ Red Phosphor on Silicon Wafer
- Alternative Title
- 실리콘 웨이퍼상의Y 2 SiO 5 :Eu 3+ 적색 형광체의 박막 전계 발광 소자
- Abstract
- The red alternating current thin film electroluminescent (ACTFEL) device has been demonstrated by using Eu3+-activated Y2SiO5 phosphor as an emitting layer. The ACTFEL device consists of indium tin oxide (ITO) top electrode, sandwiched SiO2 dielectric layer and Y2SiO5:Eu3+ layer grown on N-type Si wafer as bottom electrode. The phosphor layer is prepared through a sol-gel based spin coating method, which was annealed at 1200 °C for 4 hours in air atmosphere. The PLE spectrum has 250 nm peak which result from charge transfer state (CTS) transition. The PL spectrum has 585 and 610 nm main peaks, which are attributed to 5D0 → 7F1 and 5D0 → 7F2 transition of Eu3+ in Y2SiO5:Eu3+ phosphor, respectively. The EL device emits the sharp red spectrum with a luminance of 1.6 cd/m2 at 80 V and 400 Hz while the highest efficiency is 0.6 lm/W at 45 V with the same frequency. The EL device shows the exponential increase to AC voltage and the linear increase to frequency with a threshold voltage (Vth) of 40 V. The luminance is relatively stable with the increasing of temperature in the range of 20-80°C. However, the luminance is decreased gradually after 80°C due to thermal quenching effect of the phosphor. Finally, this EL device exhibits stable constant color in the extreme hot condition without changing its spectra.
적색 교류 박막 전계 발광 (ACTFEL) 소자는 Eu3+ 활성화Y2SiO5 형광체를 발광층으로 사용하여 제작되었다. ACTFEL 소자는 인듐 주석 산화물 (ITO) 상부 전극, 샌드위치 구조인 SiO2 유전체층 및 하부 전극으로서 N type Si웨이퍼 상에 제작된 Y2SiO5:Eu3+ 층으로 구성된다. 형광체층은 졸-겔 기반 스핀 코팅 방법을 통해 제조되었고, 공기 분위기에서 1200 °C 에서 4 시간 동안 열처리하였다. PLE 스펙트럼은 전하 이동 상태 (CTS) 전이로부터 기인한 250 nm 피크를 갖는다. PL 스펙트럼은Y2SiO5:Eu3+ 형광체에서 각각 5D0 → 7F1 및 5D0 → 7F2 전이에 해당하는 585 및 610 nm 주 피크 스펙트럼을 갖는다. EL 소자는 넓은 적색 스펙트럼을 방출하고 80 V 및 400 Hz에서 1.6 cd/m2의 휘도를 가지지만 효율은 45 V에서 최고 0.6 lm/W이다. EL 소자는 임계 전압 (Vth) 이 40 V 이고, 전압에 따라 기하급수적으로 증가하고 주파수에 따라 선형적으로 증가하는 것을 보인다. 휘도는 20-80°C의 범위에서 상대적으로 안정했다. 그러나, 형광체의 열적 소광 효과로 인해 80°C 이후 점진적으로 감소한다. 마지막으로, 이 EL소자는 스펙트럼을 변화시키지 않으면서 일정한 색을 나타내고, 고온에서 안정하다.
- Author(s)
- AFANDI MOHAMMAD MALIK
- Issued Date
- 2018
- Awarded Date
- 2018. 8
- Type
- Dissertation
- Publisher
- 부경대학교
- URI
- https://repository.pknu.ac.kr:8443/handle/2021.oak/14586
http://pknu.dcollection.net/common/orgView/200000108674
- Affiliation
- 부경대학교 대학원
- Department
- 대학원 융합디스플레이공학과
- Advisor
- Kim Jong Su
- Table Of Contents
- Contents i
List of Figures iv
List of Tables vi
Acknowledgements vii
Abstract ix
Chapter 1 Introduction 1
Chapter 2 Background 4
1. Electroluminescence 4
1.1 Various Electroluminescent Devices 4
1.2 Alternating Current Thin Film Electroluminescent Device 6
2. Sol-Gel Coating Method 10
2.1 Sol-Gel 10
2.2 Spin Coating 11
3. Oxide Phosphor for EL Devices 13
3.1 Various Types of Oxide Phosphor 13
3.2 Y2SiO5 Host Lattice 14
3.3 Activators 15
3.4 Thermal Quenching Behavior 18
Chapter 3 Experimental Procedures 19
1. Sol-Gel Preparation 19
1.1 Y2SiO5 Phosphor Solution 19
1.2 SiO2 Dielectric Solution 21
2. Thin Film Electroluminescent Device 21
2.1 Silicon Wafer Substrate 21
2.2 Spin Coating of Y2SiO5:Eu3+ Phosphor 22
2.3 Spin Coating of SiO2 23
2.4 Heat Treatment 24
2.5 Sputtering of ITO 24
3. Measurements 25
3.1 Morphological Measurements 25
3.2 PL and PLE Measurements 26
3.3 Opto-Electrical EL Measurements 26
Chapter 4 Results and Discussion 28
1. Structural Characteristics 28
1.1 FE-SEM Image of Y2SiO5:Eu3+ Phosphor 28
1.2 XRD Pattern of Y2SiO5:Eu3+ Phosphor 30
1.3 EDX Spectrum of Y2SiO5:Eu3+ Phosphor 31
2. Optical Properties 32
2.1 PLE, PL and EL Spectra 32
2.2 Decay Curve 34
2.3 Time Chart 36
2.4 Reflectance 38
3. Opto-Electric Properties 39
3.1 Voltage-Dependent EL Spectra 39
3.2 Frequency-Dependent EL Spectra 43
3.3 Temperature-Dependent EL Spectra 45
4. Electrical Properties 49
4.1 Q-V Characteristics 49
4.2 Efficiency and Power Consumption 51
Chapter 5 Conclusion 53
References 55
- Degree
- Master
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