TiN 박막 형성에 미치는 ion beam 조사 효과

Abstract

Low energy high current N_2 ion beam was used to modify the morphology and chemical composition of cemented carbide WC-Co(Co：10 wt%, TiC + TaC：15 wt%, WC：bal) hard material surface for the fabrication of the TiN thin film by sol-gel method. The effects of ion beam treatment on preparation of the TiN thin film by sol-gel mothod were investigated by XPS, SEM, AFM and GXRD. According to the N_2 ion beam bombardment, the surface roughness was increased and TiC binders in WC were dissolved. The dissolved Ti was recombind with nitrogen ion to form the TiN nucleuses which were acted as seeds for the forming of the TiN thin film on the cemented WC-Co surface. Besides, the sputter deposited Ti interlayer prevented the diffusion of TiO_2 sol into the porous WC-Co during the formation of TiN thin film.