얇은 산화층 MOS 소자의 Co-γ 선 영향에 관한 연구

Abstract

MOS capacitors with SiO₂, oxides ranging from 40Å to 10,000Å thick were exposed to a ????Co-γ(5.4mci) radiation. For devices with oxides less than 100Å thick, little or no parallel shift, as a result of irradiation were observed in the C-V characteristic, indicating negligible buildup of oxide charge and negligible change in the interface density upon irradiation. For oxides thicker than 100Å, the oxide charge buildup inceased greatly with thickness in the p-type devices, whereas in the n-type devices the oxide charge buildup was comparable to the thin-oxide value. Differences in oxide charge buildup between p-type and n-type Al-metal electrode thick-oxide devices can be understood qualitatively by metal-semiconductor work-function differences.