고체 전해질 게이트 절연체가 적용된 하이브리드 박막 트랜지스터 기반 저전압 상보성 동작 회로에 관한 연구

Abstract

Recently, electronic device technology has been researching and developing printing electronic technology through solution process for manufacturing soft electronic applications, such as wearable devices, Internet of Things(IoTs) and Radio-Frequency Identification(RFID) tags. Soft electronic applications must maintain its inherent characteristics for various external stimuli and operate under extremely low-power operating condition due to its limited power source. Therefore, new materials and processes need to be developed to integrate electronic circuits on flexible substrates. In particular, field-effect transistors(FETs) not only have thin films for application to backplanes and flexible electronic devices in next-generation displays, but also require high performance driving and flexible properties under low voltage conditions. In this study, we reported organic and inorganic bi-layer thin-film transistors(TFTs) with solid-state electrolyte gate insulator(SEGI) and fabricated complementary metal-oxide-semiconductor(CMOS)-like inverter circuits based on this. The solid state electrolyte insulator was fabricated by using poly(vinylidene fluoride) based polymer and 1-Ethyl-3-methyl Imidazolium bis(Tri fluoro methyl sulfonyl) Imide [EMIM][TFSI] , which is ionic liquid. In order to show the ambipolar characteristics of the TFT, P-type polymer semiconductor Poly(3-hexylthiophene-2,5-diyl) P3HT and N-type metal oxide semiconductor Indium-Gallium-Oxide(IGO) were used as active layers. We investigated not only the electrical characteristics of TFTs and CMOS inverters but also the charge transfer at the IGO and P3HT interfaces based on the high charge density induced by SEGI.