향상된 전하 주입 특성으로 인한 양극성 유기 반도체 기반 저전압 구동 비휘발성 트랜지스터 메모리 제작

Abstract

Solution-processed pi-conjugated organic semiconductors potentially enable to flexible and printed electronics and optoelectronic applications via large-area, high-throughput, and low-cost graphic arts printing methods. For enabling soft electronic devices and systems, it should be developed various electronic components such as integrated circuits and non-volatile memory as well as operating under low bias conditions. High-k fluorinated polymer dielectrics such as P(VDF-TrFE) and its derivatives are typically used as low-voltage operating organic field-effect transistors (OFETs) due to their high electric constant and high breakdown strength. However, those PVDF-based polymers typically adversely affected the performance of N-type OFETs by depleting electrons at the semiconductor-dielectric interface and large charge injection barrier due to the high polarity of the C-F bonds. Here we studied the problem which leads to electron-depletion phenomenon at the interface in order to improve performance of N-channel OFETs. Moreover, storage capacity of non-volatile memory based on OFETs was also remarkably increased by incorporation of charge injection layer, which contributed to change its operation mode from unipolar to bipolar.