초임계 이산화탄소와 초음파, 교반, 공용매를 이용한 HDI-PR 제거 특성

Abstract

Photoresist makes that was carried high dose ion-implantation out. At this time, It has problem that indurate photoresist because of high dose ion implantation. So, It was solved via scCO2, ultrasonic, and various co-solvent. Manufacture different width, height length pattern, Then It was tested tailorability and ability performance about various HDI PR pattern. Investigate the supercritical carbon dioxide and Ultrasonic about affecting the pattern on the wafer, co-solvent has limited that co-solvent can not remove indurate PR layer perfectly. So, stripping efficiency was highly improved by the physical force generated from a ultrasonication tip inside the reactor. HDI PR removal characteristics were investigated that test cleaning performance according to the process parameters(cosolvent type, concentration, reaction temperature and change pressure). The wafer surfaces were analyzed by Scanning Electron Microscopy(SEM), Energy-dispersive X-ray Spectrometer(EDS). HDI PR Stripping process technology development was carried out. In addition, helium gas was injected in the reactor as a barrier gas before the introduction of pure scCO2, which reduced the rinsing time significantly.