녹색 및 황색 발광 α, β-phase Zn2SiO4:Mn2+기반 MOS 구조 전계발광소자

Abstract

A ZnO:Mn phosphor thin film was deposited on si wafer by RF Magnetron Sputtering and them annealed to form a Zn2SiO4:Mn2+ thin film. The structural characteristics of each annealing temperature and characteristics of the light emitting device were studied. In this research, MOS structure device has a thickness of several nm based on a si wafer. Zn2SiO4:Mn2+ 65 nm thick phosphor thin film is formed on the top of p-type si wafer, and alternate current(AC) power is applied between the transparent ITO top-electrode and bottom-electrode(Al). Phosphor thin film deposited ZnO:Mn target on si wafer surfaces by RF Magnetron sputtering, synthesized α-phase, β-phase Zn2SiO4:Mn2+ phosphor thin film by Rapid Thermal Annealing system(RTA), and drove a semiconductor light emitting structure composed of a top electrode ITO-Oxide phosphor layer-silicon substrate. Though AC drive, visible light spectrum with 525 nm from α-phase Zn2SiO4:Mn2+ and β-phase 566 nm from d-d transition of Mn2+ ions. The Vth(Threshold voltage) of the device was 18 Vrms and breakdown occurred at 31 Vrms and it showed exponential increase intensity and curve shape increase current when voltage increases.