고성능 전해질 게이트 트랜지스터 응용을 위한 다공성 나노 구조 유기물 반도체 박막 제조 연구

Abstract

Over the past decade, Organic Field-Effect Transistors (OFETs) have emerged as prominent candidates in electronic device applications, yet they face limitations in their range of applications compared to large-area compatible inorganic materials like metal oxide semiconductors. Addressing these limitations, scientists have been exploring high-dielectric materials, ultra-thin layers, and electrolytes with high specific capacitance to enhance charge carrier density. Electrolyte-Gated Transistors (EGTs), utilizing electrolytes as insulators to form high-capacitance electrical double layers, stand out in this context. EGTs offer advantages like low-voltage operation and low power consumption, making them ideal for applications in biosensors and wearable devices. The ability to use organic materials in EGTs, allowing for solution processability, opens up opportunities for both custom design and mass production. In this paper, our paper reports on the fabrication and performance of ultra- low-voltage Organic Thin-Film Transistors (OTFTs) using Solid Electrolyte Gate Insulators (SEGIs). Our research focused on implementing advanced techniques to create nanostructures in the organic semiconductor layer, significantly enhancing device performance by improving ion dispersion and facilitating charge transport. Furthermore, we explored advanced patterning of the organic semiconductor layer to reduce leakage current, which notably improved the device's electrical performance. This development enables OTFTs with high carrier mobility and low operating voltage, offering a novel approach to achieve high performance and low power consumption in flexible and wearable electronic devices. The outcomes of this research mark a substantial advancement in OTFT design and fabrication, crucial for improving the performance and efficiency of future electronic devices.