저전압 구동 소자를 위한 고분자-전 해질 게이트 층이 적용된 인듐-갈륨 산화물 반도체 층 기반 전해질 게이 트 트랜지스터의 전기적 특성 연구

Abstract

Recent advancements in AI (Artificial Intelligence) have acceler ated dramatically, requiring massive amounts of data to be transm itted, received, and processed. Current computing systems utilize the Von Neumann architecture, where computational units and data storage units are physically separated, resulting in data bottlenecks, processing delays, and significant power consumption, as a single computational unit handles extensive datasets. Various studies and approaches, including high-k materials and advanced packaging technologies, have been introduced to overcome these limitations. Among these, the primary challenge is substantial power consumption. It is predicted that within a few years, AI-specific data centers will consume power comparable to entire national scales, highlighting the critical need for electronic devices that efficiently operate at low voltage. Electrolyte-gated field-effect transistors (EGFETs) are electronic devices that utilize ion-conductive electrolytes as gate dielectrics, presenting an alternative to traditional field-effect transistor (FET) structures. Electrolytes allow ionic conduction without electronic transport, forming electrical double layers (EDLs) at electrolyte/active-layer and electrolyte/electrode interfaces. These EDLs exhibit extremely high capacitances per unit area, enabling exceptional electrical characteristics at low operating voltages between approximately +1~3V. In this study, we fabricated solution-processed thin-film EGFETs utilizing N-type amorphous indium-gallium-based metal oxide semiconductors (IGO) and electrolyte layers comprising semi-crystalline polyethylene oxide (PEO) blended with ionic metal salt lithium bis(trifluoromethanesulfonyl)imide (LiTFSI). The IGO semiconductor maintains high electrical conductivity even in its amorphous phase due to its inherently high carrier concentration. The PEO-LiTFSI electrolyte effectively dissociates Li and TFSI ions through the polar backbone of PEO, where lithium ions interact with the polymer backbone to form robust ionic conduction pathways. Using this material combination, top-gate/bottom-contact thin-film transistor (TFT) structures were fabricated, and their electrical characteristics were thoroughly investigated to assess their potential for low-voltage, energy-efficient electronic applications.