PLD 방법으로 제작한 Gd(P, V)O4:Eu3+ 박막의 형광특성 연구

Abstract

Red emitting GdP1-xVxO4:Eu3+ (x=0.00, 0.25, 0.50 and 0.75) powder phosphors were prepared by using a solid state reaction method. The doping concentration of Eu3+ ions was 3 mol%. Thin film phosphors of GdP1-xVxO4:Eu3+ have been grown on Al2O3(0001) substrates using pulsed laser deposition(PLD). The microstructure of both the GdP1-xVxO4:Eu3+ powder with different compositions and thin film phosphors grown under different deposition conditions were analyzed by using X-ray diffraction (XRD). The surface morphology of the GdP1-xVxO4:Eu3+ powder is measured by field emission scanning electron microscope (FE-SEM), but thin films are measured by atomic force microscope(AFM). The XRD, FE-SEM and AFM results indicated that the particles present in a good crystalline state had grain sizes in the range of ∼ 100 nm. The characteristic emissions of Eu3+ due to 5D0-7F1 (orange) and 5D0-7F2 (red) transitions were detected. Furthermore, in the system of GdP1-xVxO4:Eu3+, the orange-to-red intensity ratio (O/R) depended greatly on the ratio of P/V. The crystallinity and the surface morphology of the powders also highly depended on the molar ratio P/V. The highest emission intensity was observed with the GdP0.5V0.5O4:Eu3+ powders. This phosphor holds promise for applications to flat panel displays.